2sc2001 transistor de hoja de datos pdf

2SC2001
fabricante : Electron Devices
descripción : TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),TO-92

2SC2001
fabricante : Components
descripción : TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR

2SC2001
fabricante : TRANSYS Electronics Limited
descripción : Plastic-Encapsulated Transistors

2SC2001
fabricante : ETC[ETC]
descripción : Medium Power Amplifiers Switches

2SC2001
fabricante : NEC[NEC]
descripción : SILICON TRANSISTOR

2SC2001
fabricante : NEC
descripción : NPN SILICON TRANSISTOR

2SC2001
fabricante : ETC
descripción : Medium Power Amplifiers and Switches

2SC2001
fabricante : TRANSYS Electronics Limited
descripción : Plastic-Encapsulated Transistors

2SC2001
fabricante : Dc Components
descripción : TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

2SC2001
fabricante : ETC
descripción : TO-92 Plastic-Encapsulate Transistors

2SC2001
fabricante : ETC
descripción : Medium Power Amplifiers and Switches

2SC2001
fabricante : NEC
descripción : NPN SILICON TRANSISTOR

2SC2001
fabricante : ETC
descripción : TO-92 Plastic-Encapsulate Transistors

2SC2001
fabricante : Usha
descripción : Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 700mA.