bc308 transistor de hoja de datos pdf

BC308
fabricante : FAIRCHILD[Fairchild Semiconductor]
descripción : EPITAXIAL SILICON TRANSISTOR

BC308
fabricante : KEC[KEC(Korea Electronics)]
descripción : EPITAXIAL PLANAR TRANSISTOR (GENERAL PURPOSE, NOISE AMPLIFIER)

BC308
fabricante : MICRO-ELECTRONICS[Micro Electronics]
descripción : SILICON PLANAR EPITAXIAL TRANSISTOR

BC308
fabricante : Fairchild Semiconductor
descripción : PNP EPITAXIAL SILICON TRANSISTOR

BC308
fabricante : KEC(Korea Electronics)
descripción : EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

BC308
fabricante : Micro Electronics
descripción : PNP SILICON PLANAR EPITAXIAL TRANSISTOR

BC308
fabricante : SEMTECH ELECTRONICS LTD.
descripción : PNP Silicon Epitaxial Planar Transistor

BC308
fabricante : KEC(Korea Electronics)
descripción : Epitaxial Planar PNP Transistor(General Purpose??ow Noise Amplifier Application)(??????PNP???????????????????????

BC308
fabricante : Fairchild Semiconductor
descripción : PNP Epitaxial Silicon Transistor(PNP?????????)

BC308
fabricante : Micro Electronics
descripción : PNP SILICON PLANAR EPITAXIAL TRANSISTOR

BC308
fabricante : KEC(Korea Electronics)
descripción : EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

BC308
fabricante : Fairchild Semiconductor
descripción : PNP EPITAXIAL SILICON TRANSISTOR

BC308
fabricante : Micro-Electronics
descripción : 300mW PNP silicon planar epitaxial transistor

BC308
fabricante : Fairchild
descripción : PNP Epitaxial Silicon Transistor

BC308
fabricante : Usha
descripción : Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.